HiSIM_HV LDMOS Model Extraction

opt_ex11 : HiSIM_HV LDMOS Model Extraction

Requires: Utmost IV, SmartSpice, SmartView

Minimum Versions: Utmost IV 1.10.6.R, SmartSpice 4.10.2.R, SmartView 2.28.2.R

This example describes how to extract a standard HiSIM_HV model (level = 73) parameters. To extract a model which is scalable with geometry, multiple different device sizes must be included. In this example, three geometry devices are included.

The project file opt_ex11.prj and the data file opt_ex11.uds for this example should be loaded into your database. When opened, the project will look as shown in opt_ex11_project.png .

The optimization sequence, which fully automates the extraction of HiSIM_HV model parameters, has eight sections. The section one and two extract the threshold region model parameters of HiSIM_HV. The third section is prepared to get the initial model parameters for the substrate current model of HiSIM_HV. The section four aims to optimize the drift region resistance parameters at the small drain voltage. The bias dependency of the drift region resistance is optimized in the section five. This completes the reference geometry model parameters at the room temperature. The section six to eight optimize the geometry and the temperature scaling model parameters to complete the scalable HiSIM_HV model over the temperature change.

Section 1 : idvglin_cap_rtp

This section optimizes the parameters for the ldmos reference geometry device. The data in this section is the drain current versus gate voltage characteristics in the linear region and the cgg capacitance characteristics at the room temperature. The following model parameters are extracted.

  • nsubc Substrate impurity concentration
  • vfbc Flat band voltage
  • ninv Inversion charge contribution on effective-electric field
  • ndep Depletion charge contribution on effective-electric field
  • muecb0 Coulomb scattering
  • muecb1 Coulomb scattering
  • mueph0 Phonon scattering
  • mueph1 Phonon scattering
  • loverld Overlap length at drain side, and at source if cosym=1
  • lovers Overlap length at source side
  • nover Impurity concentration of loverld at drain, and at source if cosym=1
  • vfbover Flat-band voltage in overlap region

After this step has been completed, the fit to measured data will be as shown in opt_ex11_01.png .

Section 2: idvglin_warray_rtp

In this section, the parameters for narrow width effect are optimized using the devices of multiple width values. The following model parameters are extracted.

  • nsubcw Modification of substrate concentration for narrow width
  • wl2 Threshold voltage shift due to small size effect
  • wvth0 Threshold voltage shift
  • muephw Width dependence of phonon mobility reduction

Also, the following model parameters used at the previous step are included in this section to ensure the entire fitting.

  • nsubc
  • vfbc
  • mueph0
  • mueph1

After this step has been completed, the fit to measured data will be as shown in opt_ex11_02.png .

Section 3 : idvd_warray_rtp

The section aims for getting the initial values of the substrate current model parameters. The following model parameters are extracted.

  • sub1 Substrate current coefficient of magnitude
  • sub2 Substrate current coefficient of exponential term
  • svds Substrate current coefficient of exponential term
  • svgs Substrate current dependence on Vgs
  • clm1 Hardness coefficient of channel/contact junction
  • clm2 Coefficient for QB contribution
  • clm3 Coefficient for QI contribution
  • clm5 Effect of pocket implantation
  • clm6 Effect of pocket implantation

Also, the following model parameters used at the previous steps are included in this section to ensure the entire fitting.

  • vfbc
  • mueph0
  • mueph1
  • wl2
  • wvth0

After this step has been completed, the fit to measured data will be as shown in opt_ex11_03.png .

Section 4 : idvglin_ref_rtp

This section extracts the model parameters of the drift region resistance for the reference geometry device. The data in this section is the drain current versus gate voltage characteristics in the linear region.

  • ldrift1 Length of light doped drift region at drain, and at source if cosym=1
  • ldrift2 Length of heavily doped drift region at drain side, and at source if cosym=1
  • rd Drain-contact resistance in LDD region
  • rs Source-contact resistance in LDD region
  • rdict1 Ldrift1 dependence of resistances for corsrd=1,3
  • rdict2 Ldrift2 dependence of resistances for corsrd=1,3
  • rdslp1 Ldrift1 dependence of resistances for corsrd=1,3
  • rdslp2 Ldrift2 dependence of resistances for corsrd=1,3
  • rdvg11 Vgs dependence of rd for corsrd=1,3
  • rdvg12 Vgs dependence of rd for corsrd=1,3

Also, the following model parameters used at the previous steps are included in this section to ensure the entire fitting.

  • nsubc
  • vfbc
  • muecb0
  • muecb1
  • mueph0
  • mueph1
  • ninv
  • ndep

After this step has been completed, the fit to measured data will be as shown in opt_ex11_04.png .

Section 5 : idvgall_idvd_ref_rtp

The previous four sections concentrated mostly on the linear region drain current versus gate voltage for each of the different geometry devices. The intention was to get the precise threshold model parameters which are suitable for the different geometry devices. Also, the drift region resistance of the reference geometry device at the small drain voltage region was extracted as the initial values for the succeeding optimization steps. This section will use the saturation region drain current versus drain voltage data for the reference geometry to optimize the saturation region parameters and the drift resistance dependency on the drain and the gate voltages. The following parameters are optimized.

  • ninvd Reduced resistance effect for small Vds
  • vmax Saturation velocity
  • bb High-field-mobility degradation
  • rdvd Vds dependence of rd for corsrd=1,3
  • rd20 rd20 boundary for corsrd=2,3
  • rd21 Vds dependence of rd for corsrd=2,3
  • rth0 Thermal resistance

Also, the following model parameters used at the previous steps are included in this section to ensure the entire fitting.

  • rd
  • rs
  • ldrift1
  • ldrift2
  • rdvg11
  • rdvg12
  • rdict1
  • rdict2
  • rdslp1
  • rdslp2
  • sub1

After this step has been completed, the fit to measured data will be as shown in opt_ex11_05.png .

Section 6: idvgall_idvd_ref_tp

This section extracts the temperature model parameters using both the drain current versus gate voltage characteristics in the linear region and the saturation region drain current versus drain voltage for the reference geometry device at three temperatures. The following parameters are optimized.

  • bgtmp1 Temperature dependence of bandgap
  • bgtmp2 Temperature dependence of bandgap
  • muetmp Temperature dependence of phonon scattering
  • rdtemp1 Temperature dependence of resistance
  • rdtemp2 Temperature dependence of resistance
  • ninvdt1 Temperature dependence of universal mobility model
  • ninvdt2 Temperature dependence of universal mobility model
  • rdvdtemp1 Temperature dependence of resistance
  • rdvdtemp2 Temperature dependence of resistance
  • rthtemp1 Temperature dependence of thermal resistance
  • rthtemp2 Temperature dependence of thermal resistance
  • vmaxt1 Temperature dependence of velocity
  • vmaxt2 Temperature dependence of velocity
  • vtmp Temperature dependence of the saturation velocity

Also, the following model parameters used at the previous steps are included in this section to ensure the entire fitting.

  • vfbc
  • rd
  • rs
  • ldrift1
  • ldrift2
  • rdict1
  • rdict2
  • rdslp1
  • rdslp2
  • rth0

After this step has been completed, the fit to measured data will be as shown in opt_ex11_06.png .

Section 7 : idvgall_idvd_w_rtp

All geometry devices at the room temperature are used to fit the geometry scaling parameters.

  • xw Difference between real and drawn gate width
  • xwdld Widening of drift width
  • muesrw Change of surface roughness related mobility
  • muephs Mobility modification due to small size
  • ninvdw Width dependence of high field mobility
  • rth0w Width dependence of thermal resistance
  • svgsw Wgate dependence of svgs
  • rd24 Vgs dependence of rd for corsrd=2,3
  • rd25 Vgs dependence of rd for corsrd=2,3
  • rdvds Vgs dependence of rd for corsrd=1,3
  • subld1 Substrate current induced in Ldrift
  • subld2 Substrate current induced in Ldrift

Also, the following model parameters used at the previous steps are included in this section to ensure the entire fitting.

  • vfbc
  • ldrift1
  • ldrift2
  • ninvd
  • rs
  • rd
  • rds
  • vmax
  • bb
  • rdvd
  • rdvg11
  • rdvg12
  • rdict1
  • rdict2
  • rdslp1
  • rdslp2
  • clm1
  • clm2
  • clm3
  • clm5
  • clm6
  • rd20
  • rd21
  • rth0
  • sub1
  • sub2
  • svds
  • svgs
  • wvth0
  • muephw
  • wl2

After this step has been completed, the fit to measured data will be as shown in opt_ex11_07.png .

Section 8 : idvgall_idvd_w_tp

The final section is for all geometry devices at all temperatures for the improvement of the entire fitting. No newly added model parameters are used.

  • bgtmp1
  • bgtmp2
  • muetmp
  • vtmp
  • vmaxt1
  • vmaxt2
  • ninvdt1
  • ninvdt2
  • rthtemp1
  • rthtemp2
  • rdtemp1
  • rdtemp2
  • rdvdtemp1
  • rdvdtemp2
  • vfbc
  • ldrift1
  • ldrift2
  • mueph0
  • mueph1
  • ninvd
  • vmax
  • rdvg11
  • rdvg12
  • rdvd
  • rth0

After this step has been completed, the fit to measured data will be as shown in opt_ex11_08.png .

The sequence is prepared for the best fit. No repeated run would be necessary.

Note for reducing the run time.

Utmost IV is able to control the number of parallel runs of SmartSpice. The increase of number of smartspice shortens the run time for the multi-core machines. Edit -> Preferences -> Simulator .