HiSIM-IGBT Model Extraction

opt_ex10 : HiSIM-IGBT Model Extraction

Requires: Utmost IV, SmartSpice, SmartView

Minimum Versions: Utmost IV 1.10.6.R, SmartSpice 4.10.2.R, SmartView 2.28.2.R

This example describes the extraction of model parameters of the HiSIM-IGBT (Version 1.2.0, LEVEL=3, Silvaco implementation) model for Insulated Gate Bipolar Transistor devices. The extraction for DC current characteristics at room temperature is considered.

To set up the extraction environment, the project file opt_ex10.prj and the data file opt_ex10.uds should be loaded into the database. The project, when opened in Utmost IV, is shown in opt_ex10_01.png .

The optimization sequence, which automates the parameter extraction, is divided into three sections. Some model parameters are optimized across the sections for better fitting.

To start the sequence, process parameters TOX and NSUBC are needed as a priori parameters.

Section 1 : ICvsVG_low_mid_rtemp

This section optimizes the parameters for threshold characteristics. The data is the collector current vs. gate voltage characteristics(ICvsVG) at low or middle collector-emitter voltage (Vce) at room temperature. This section has three steps.

  • The first step's fitting target is the low and middle gate-emitter voltage (Vge).
  • The second and third step's fitting target is the middle and high Vge.
  • The first and second steps use Genetic Algorithm while the third step uses Levenberg-Marquardt Algorithm. The parameters are optimized as follows: NSUBC, VFBC, MUEPH0, MUEPH1, BJTRBVG11, BJTRBVG12, BJTRB, BJTMUEN, BJTMUEP, BJTNINJ, BJTTAUB, BJTWB, BJTLDEC, BJTWDEPMAX . The following parameters can be further used, if necessary: NDEP, NINV, BJTRC, BJTRE, BJTTAUC, BJTTAUE, BJTNB, BJTNC, BJTNE

After this section is completed, the fit to measured data is shown in opt_ex10_02.png .

Section 2 : ICvsVG_high_rtemp

This section optimizes the parameters for high-field mobility and base resistance. The data is ICvsVG at mid and high Vce at room temperature. This section uses Levenberg-Marquardt Algorithm and optimizes the parameters as follows: BJTRB, BJTRC, BJTMUEN, BJTMUEP, BJTMUEQN, BJTTAUB, BJTWDEPMAX, VMAX

After this section is completed, the fit to measured data is shown in opt_ex10_03.png .

Section 3 : ICvsVC_rtemp

This section optimizes the parameters for saturation operation. The data is the collector current vs. collector voltage characteristics(ICvsVC) at room temperature. In this section, ICvsVC data is divided into some regions. (Refer to Optimization Setups "icvc_1" and "icvc_2".) This section uses Levenberg-Marquardt Algorithm and optimizes the parameters as follows: BJTRB, BJTRC, BJTTAUB, BJTWB, BJTLDEC, BJTRBVG11, BJTRBVG12, VMAX . The following parameters can be further used, if necessary: BJTMUEN, BJTMUEP, BJTMUEQN, BJTWDEPMAX, BJTWHALFCELL, NSUBC, NSUBP, NSUBP0, VFBC, MUECB0, MUECB1, MUEPH0, MUEPH1, MUESR0, MUESR1, VOVER, VOVERP

After this section is completed, the fit to measured data is shown in opt_ex10_04.png .

When the entire sequence is completed, the model card can then be exported into an external model library file as shown in the output file opt_ex10.lib.