SRAM Cell with Multiple Metals and Dielectrics

clex11.in : SRAM Cell with Multiple Metals and Dielectrics

Requires: CLEVER

Modern designs make use of mask layers which are not always at right angles to each other. The layout used in this example illustrates a 45 degree angle for certain mask layers. This would normally make the calculation of parasitic resistances very difficult, but with CLEVER this is handled easily.

In many cases the back-end processing makes use of different non-standard materials for the insulators and the metal conductors.

This example is based upon the simulation of an SRAM cell which consists of four different metal layers, plus polysilicon.

The initial processing stages demonstrate how Odin allows deposition of user-defined materials. Once the structure has been created these new materials can then be displayed within TonyPlot3D.

Before the parasitic extraction takes place using the Interconnect statement, the physical parameters of the new materials are defined using the Material statement.

This example has been used in the CLEVER tutorial in the manual and further information may be obtained there.

To load and run this example, select the Load example button in DeckBuild. This will copy the input file and any support files to your current working directory. Select the run button to execute the example.