clex07.in : EXNOR Cell with Physical Geometry
Requires: CLEVER
This example is identical to example clex06.in except that the etching models have been upgraded to a more physical 87 degree side-wall. The same EXNOR custom cell layout is used and illustrates how CLEVER may be used to analyse the effect of the etching model on a complex custom cell.
The extracted netlist may be used in a SmartSpice input deck to analyse the circuit performance which can then be compared to the previous example.
When this example is loaded support files, that may be run in SmartSPice to show the circuit behaviour, will also be loaded.
It should be noted that the high resolution geometries created by the realistic physical process models used in this example require a usable memory of approximately 300MB to run the parameter extraction programs due to the intricate mesh thus created. The simulation can be run on machines with less memory but the program may take a significantly longer time to run due memory swapping between the RAM and hard disk.
To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.
Input Deck
go victoryprocess ## Process Description ## init Layout=clex07.lay Depth=1 material=silicon rulefile=clex07.lmp # Gate Stack Deposit material=Oxide Thickness=0.3 Max Deposit material=Poly Thickness=0.25 Max Etch material=Polysilicon Thickness=0.3 angle=87 Mask=POLY max Electrodes mask=*GATE material=poly # Contacts Deposit material=Oxide Thickness=0.5 Max Etch material=Oxide Thickness=1.2 angle=87 Mask=CONT Reverse max Electrodes mask=*CONT material=Silicon # Metal 1 Deposit material=Aluminum Thickness=0.5 Max Etch material=Aluminum Thickness=0.6 angle=87 Mask=METAL1 max Electrodes mask=METAL1 material=Aluminum # Via 1 Deposit material=Oxide Thickness=0.5 Max Etch material=Oxide Thickness=0.6 Isotropic=87 Mask=VIA1 Reverse max # Metal 2 Deposit material=Aluminum Thickness=0.5 Max Etch material=Aluminum Thickness=0.6 angle=87 Mask=METAL2 max Electrodes mask=METAL2 material=Aluminum # Via 2 Deposit material=Oxide Thickness=1 Max Save Name=clex07_0 ## After creating the 3D structure ## ## Perform the Interconnect Analysis ## go clever Init Layout="clex07.lay" Map="clex07.lmp" structure="clex07_0.str" Save Spice="clex07.before.net" Material Poly Conductivity=5e4 Material Aluminum Conductivity=1e6 Interconnect Adapt=(0.04,0.02) capsolver=1 Save Spice="clex07.net" quit