Simulating Silicon Devices at Cryogenic Temperatures

This webinar discusses the problems encountered when using the Drift-Diffusion method to simulate the behavior of silicon devices at temperatures between 4 Kelvin and 100 Kelvin. In addition to applications of cryoelectronics in space science and exascale computing, it is likely that cryo-CMOS devices will be needed to significantly advance solid-state quantum computing. TCAD modeling of these devices at cryogenic temperatures is expected to contribute to improvements in their design. In the sub-100 Kelvin temperature range, there are significant challenges with TCAD simulation of device behavior, both in the numerical aspects and in the choice of physical models. This webinar discusses these difficulties in detail, as well as how these challenges have been largely overcome in Silvaco device simulators.

What attendees will learn:

  • Main difficulties of cryogenic TCAD simulation
  • How these challenges are overcome
  • TCAD simulation of a MOSFET at low temperature
    • How to set up the deck for cryogenic simulation
    • How to include incomplete ionization
    • How to consider self-heating effects
  • TCAD simulation of a silicon avalanche photodiode
    • How to set up the deck for cryogenic simulation
    • Which impact ionization model to use

David Green

Presenter:

Dr. Stephen Wilson is a senior TCAD development engineer in Silvaco’s TCAD division. He has spent the last 16 years with Silvaco, diligently improving the scope and quality of Silvaco’s device simulators, ATLAS and Victory Device. He holds a PhD. in Electronics from the University of York, U.K. Prior to joining Silvaco, Dr. Wilson conducted research into impact ionization processes in semiconductors. He has also worked on developing Ground Penetrating Radar systems in a commercial context.


Who should attend:

Academics, engineers, and management seeking solutions for design silicon devices for cryogenic operation.