Modeling and Analysis of Single Event Effects - Archives

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Who should attend:

Academics, engineers and management looking for solutions to design and optimize SiC and Silicon-based power devices.



This webinar will provide a discussion of the methods used by radiation effects engineers to model the impact of Single Event Effects (SEE) and some of their effects on devices and circuits. The remarkable advances in modern device technology creates specific challenges for high–fidelity radiation effects modeling of these phenomena, while the reduction of feature sizes has made the accurate modeling of SEE and other radiation effects of critical importance. These include the need for modeling Soft Error Rates (SER), Multi Bit Upsets (MBU), chip packaging, and detailed single event effects modeling at the device and circuit level.

What attendees will learn:

  • Why understanding SEE is important?
  • Basic Mechanisms
  • Destructive Single Events Effects
    • Modeling and Analysis –TCAD Tool Flow
    • Device Techniques for Increasing Resiliency to SEE
  • Non-Destructive Single Event Effects
    • Modeling and Analysis –TCAD and EDA Tool Flow
    • Device and Circuit Techniques for Reducing Non–Destructive SEE
  • System Methodology Examples for a DC-DC Boost Converter, Power Diode, and Logic Block with Quenching

Presenter:

Dr. Christopher Nicklaw, Chief Engineer at Silvaco’s Aerospace & Defense unit, has over 35 years of experience working on radiation effects in materials. He has been involved in both Military and Commercial systems exposed to radiation environments, providing methods in modeling, simulation, analysis, and design at the device, circuit and systems level.
Dr. Nicklaw received his B.S in Electrical Engineering from Georgia Institute of Technology, an M.S. in Electrical Engineering from Naval Postgraduate School, an M.S. in Computer Engineering and a MBA from Santa Clara University, and his Ph.D. from Vanderbilt University.