Volume 29, Number 4, September - October - December 2019

Next Generation CMOS Nanowire: From Atoms to Circuit Simulation

A complete simulation flow for a Nanowire-based ring oscillator circuit is presented, where the active devices were simulated using an atomistic device simulator. The results of this simulation have been fitted to an active device SPICE compact model, specifically formulated for nanowire/Gate all around Field Effect Transistors” (FETs). Finally, the active devices were incorporated into a SPICE netlist including back end resistance and capacitance parasitics.

Optimization of Select Gate Transistor in Advanced 3D NAND Memory Cell

There are several device challenges unique to the select gate transistor in 3D NAND memory cell. It requires low leakage current to prevent read and program disturb problems and it needs to provide enough current during read and erase operation. In this paper, we examined the design optimization of select gate transistor with respect to various device elements including work-function, S/D overlap, and trap density. Finally,we reviewed the path to reduce the channel length of the select gate transistor in conjunction with the role of dummy cells.

RFSOI Switch Harmonics Simulations with Trap-Rich Substrate

The market for cellular components has been shifting rapidly from GaAs pHEMT or silicon-on-sapphire (SOS) to silicon-based technology. CMOS (silicon-on-insulator) SOI antenna switches which are compatible with multimode GSM/EDGE, TD/WCDMA, and LTE systems exhibit higher integration levels and have become the fastest growing mobile phone submarket. CMOS-SOI processes, especially with thin silicon, have the potential to rival the FoM that was traditionally feasible only with GaAs technologies.

Estimation of Interface Property Changes Between Normally On/Off Hydrogenated Diamond MISFETs

Diamond is considered to be the ultimate semiconductor material for high power and high frequency devices due to its superior electrical and thermal properties, such as high breakdown field, high carrier mobility, low dielectric constant, and high thermal conductivity, as shown in this figure.