Volume 29, Number 3, July - August - September 2019

TCAD Simulation of Electric Field Distribution in Gallium Nitride Trench-based Power Devices

Gallium nitride (GaN)-based devices are excellent candidates for high-voltage and high-power applications, due to the superior physical properties of GaN compared to Si, SiC, and GaAs. Recently, GaN vertical devices have attracted increased attention, due to their advantages over GaN lateral devices, including high breakdown voltage (BV) and current capability for a given chip size, and superior thermal performance.


Channel-length Dependence of a-IGZO TFTs with Self-heating Effects

Amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) show a high mobility, a small sub-threshold swing, and a low OFF-current, and they are considered to be one of the most promising TFT for new flat-panel displays (FPDs). The high mobility originates from the unique electron transport in a-IGZO.


Simulation of Different Tunnel Junctions in InGaP/GaAs, InGaP/CdTe Dual Junction Solar Cells

Dual junction solar cells were simulated using Silvaco TCAD tool with various tunnel junction material compositions. InGaP/GaAs dual junction solar cells were simulated with 10 different tunnel junction combinations. The highest efficiencies were from InGaP/AlGaAs and InGaP/InGaP tunnel junctions at 31.82% and 31.75%. InGaP/CdTe solar cells were also simulated with four different tunnel junction combinations.

Hints, Tips and Solutions

Q. Is it possible to emulate a deep reactive ion etch process (e.g. deep trench with scalloped sidewalls) without using a physical based process simulation, such as Victory Process?