Simulation Standard - 1995
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Volume 6, Number 1, January 1995 Extracting BSIM3 Model Parameters Using UTMOST |
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Volume 6, Number 2, February 1995 Simulation of Irradiation Effects in IGBTs with ATLAS VWF Production Tools Bring VWF Capability Closer to Manufacturing Reality Extraction of DC and AC SPICE Model Parameters From HBT Devices using the VWF |
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Volume 6, Number 3, April 1995 2D Simulation of Pseudomorphic Heterojunction Devices Using The Fully Coupled Carrier Energy Balance Model Automatic Layout to SPICE 3D Interconnect Modeling |
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Volume 6, Number 4, May 1995 A Preliminary Analysis of the BSIM3 Version 3 MOSFET Model using UTMOST Low Power MOSFET Modeling Using the EKV Model Statistical Parameter Analysis for a Process Under Development Using SPAYN |
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Volume 6, Number 5, June 1995 Complete Simulation of SOI MOSFETs Using Nonisothermal Energy Balance 3D Device Simulation Using ATLAS/Device3D The 1995 Software Release Features Strengthened and Expanded Virtual Wafer Fab |
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Volume 6, Number 6, July 1995 An Investigation of the Suitability of PCA Results Obtained from Selected Wafer Lots to Characterize Future Wafer Lots. Features of the SmartSpice Interpreter BSIM3 Version 3.0 (Beta) Available to UTMOST Users |
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Volume 6, Number 7, August 1995 ISEN Advanced Diffusion and Oxidation Models Slated for Inclusion in ATHENA 2-D Simulation of Ion Irradiated Silicon Power Devices Analysis and Calibration of LOCOS Simulation using VWF KTH Advances TCAD Program in Sweden Quasi-3D Thyristor Latch-Up Simulations Application of MixedMode Simulation to High Frequency Bipolar Characterization |
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Volume 6, Number 8, September 1995 Introducing New Device Models into SmartSpice and UTMOST Using the SmartSpice Interpreter |
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Volume 6, Number 9, October 1995 Device Modeling of PNP HBT Using ATLAS |
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Volume 6, Number 10, November 1995 Extraction of Scalable Temperature Independent BSIM3 (Version 3) and Philips Level 9 MOSFET Models Using UTMOST Comparing Worst-Case Models Generated by SPAYN to Models Derived Using Traditional Methods A New Method for Extracting Reverse Transit Time (TR) in Bipolar Transistors |
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Volume 6, Number 11, December 1995 Automated TCAD Calibration Procedure Using A Combination of VWF Automation and Production Tools A User's Perspective on Simulator Calibration Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide Thickness Dependence The Simulation of Wide Band Gap Semiconductor Materials for Use in High Temperature and Other Applications Device Simulation of a Trench-IGBT with Integrated Diverter Structures |