Visualization of 3D ion implantation channeling effect

3D contour plot of IBE redeposited material thicknesses

Silvaco will present TCAD solutions used by fabs and equipment vendors for a wide range of emerging technologies and advanced device applications:

  • Low and High Energy Ion Implantation in Silicon and Silicon Carbides
  • Ion Beam Precision Materials Modification – amorphization, stress engineering using C and Ge implants, mask-less selective etching in implanted areas
  • Rapid Thermal Annealing (RTA) and laser annealing for advanced CMOS processes
  • Ion Beam Etching (IBE) of pillar structures for STT MRAM and magnetic heads for High-Density Bit Pattern Media. Precise characterization and control of pattern shapes and secondary material redeposition effects.
  • RIE and IECE of very deep trenches for 3D NAND and other applications
  • Anisotropic KOH etching for MEMS applications
  • Stress simulation to determine Keep-Out-Zone (KOZ) in Through Silicon Via (TSV) technology
  • 3D TCAD products used for large application space, including rapid FinFET prototyping, large structure parallelized simulations for multi-cell IGBTs, robust, stable oxidation simulation for trench MOS power devices and CMOS image sensors, stress engineering, SEE and total dose reliability simulation
  • Virtual Wafer Fab (VWF) software suite for individual and full-flow process calibration and optimization using DOE and multiple automated simulations

KEY EVENTS: