Temperature Ramping - Effect on Leakage

diodeex09.in : Temperature Ramping - Effect on Leakage

Requires: S-Pisces
Minimum Versions: Atlas 5.28.1.R

This example demonstrates the correct method for global temperature ramping in Atlas for any device. A diode structure was chosen here for simplicity. In Atlas the global temperature of the device is set using the models statement. However, the global temperature can only be set ONCE in the input deck if ALL the temperature dependent parameters are to be set. If the temperature is reset during a single input deck with a second "models statement" an incorrect result is obtained, since not all of the temperature dependent parameters are set in subsequent models statements.

The solution is to use the combination of a "go atlas" statement, together with a "mesh infile=" statement. After the mesh statement, reset the global temperature with a new "models" statement.

The device bias conditions can then either be ramped up from zero, as in this example, or loaded in from the previous solution with a "load infile=" statement. In order to end up with one continuous log outfile the keyword append must be added to the log outfile name after the second and subsequent "log outfile=" statements in order to prevent the original log file from being overwritten.

This example also plots the electron and hole mobility versus temperature . Substituting different mobility models allows the temperature effects of each to be compared.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.