GaN diode, Reverse-bias leakage current vs temperature

diodeex10.in : GaN diode, Reverse-bias leakage current vs temperature

Requires: Blaze
Minimum Versions: Atlas 5.28.1.R

This example demonstrates modeling of temperature dependence of reverse-bias leakage current in GaN Schottky diode as a consequence of phonon-assisted tunneling based on the reference below:

Pipinys P., and V. Lapeika, "Temperature dependence of reverse-bias leakage current in GaN Schottky diodes as a consequence of phonon-assisted tunneling" J.Appl. Phys. 99 (2006): 093709.

It shows:

  • Structure definition using Atlas
  • Temperature Tependence Reverse Voltage Characteristics using Atlas

It has been found that the reverse I-V characteristics of some Gallium Nitride (GaN) diodes can best be explained by using a phonon-assisted electron tunneling model. The electrons are assumed to be emitted from local levels in the metal-semiconductor interface.

To enable the model, use the keyword PIPINYS on the CONTACT statement. The default value of PIP.NT is 0 and so you must set a finite value for this quantity in order for the model to have any effect. The other parameters may be specified on the MATERIAL statement. Although the model was developed specifically for reverse bias current in GaN, Atlas does not restrict use of the model to that material. PIP.OMEGA is the phonon energy, PIP.ACC is the electron-phonon interaction constant, and PIP.ET is the trap depth.

Once constructed, the device reverse characteristics are then simulated in Atlas (SPISCES), using as well the "Universal Schottky Tunneling" model (UST)

The Experiment file starts with go internal command which transfers control from the current simulator (i.e. Atlas) to DBInternal. The load command specifies which template file should be used for multiple runs. The sweep command specifies how the variables set in the template file should be changed. The parameter specified by the set command in the template file is set to be changed; in this case the temperature. The data specifies values of the temperature.

The final results are plotted using the same X and Y axes as in the paper for a direct comparison with measured results.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.