Retrograde Well Formation Using High Energy Implants

aniiex06.in : Retrograde Well Formation Using High Energy Implants

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

This example shows high energy implant capability. The look-up tables for main implants are extended up to 8 MeV which allows simulation of modern technologies involving MEV implants. In this example, the three microns deep retrograde well is formed using two P implants (2 MeV and 0.75 MeV) with subsequent 1 hour, 1100 C anneal.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.