Al implant in 4H-SiC in [11-23] Crystallographic Direction. : Al implant in 4H-SiC in [11-23] Crystallographic Direction.

Requires: SSuprem 4, MC IMPLANT
Minimum Versions: Athena 5.21.2.R

This example shows very pronounced channeling effects for on-axis implantation in 4H-SiC. The Al implant energy is 60 keV and implant direction condition corresponds to on-axis implantation in [11-23] crystallographic direction. Comparison with results of shows that crystallographic orientation significantly affects the length of channeling tails. Crystallographic analysis shows that channels in [11-23] direction are "wider" than in [0001] direction which result in almost 2 times longer channeling tails when implanting in [11-23] direction. The experimental profiles are taken from Wong-Leung et al. J. Appl. Phys. vol.93, pp 8914-8916, 2003.

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