Creating the clex16 SRAM structure in Victory Process

clex17.in : Creating the clex16 SRAM structure in Victory Process

Requires: CLEVER, VICTORYPROCESS Minimum Versions: Clever 3.10.13.A, Victory Process 7.7.6.A

This example creates the same SRAM design as in clex16, but uses the Victory Process simulator to create a more realsitic structure.

The more realistic structure is a result of three features in Victory Process:

Fisrstly, an optical solver creates an optical intensity map during photoresist exposure from a user specifiable deep-UV light source, through a lens of user specifiable numerical aperture (0.5 in this particular case). The mask can also be deliberately defocussed by a user specifyable distance in um, above or below the surface of the photoresist, using the "maskdefocus" parameter.

Secondly, photoresist mask development profile is calculated from an intensity contour map specifyable by the user as developing somewhere between zero intensity, and full intensity represented by specifying the "criticalintensity" parameter. A value of 0.5 was used in this example.

Thirdly once the photoresist mask pattern has been simulated, a geometric etch feature is used to create sloped sidewalls of 87 degrees relative to horizontal.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.