Trench Etch Tuning using RIE Model : Trench Etch Tuning using RIE Model

Requires: Elite
Minimum Versions: Athena 5.21.2.R

This example demonstrates etching using the RIE etching model. The example illustrates the influence of the DIVERGENCE of the ion beam on the final profile obtained by the DIRECTIONAL etch mode. The angular distribution of the ions coming down to the wafer is assumed to be Gaussian. Parameter DIVERGENCE sets the standard deviation of the distribution function (in degrees). The input file consists of two major parts.

The first part creates the initial multilayer structure using the Athena INITIALIZE, DEPOSIT, and ETCH statements. The INITIALIZE statement defines silicon as a substrate 1.0 micron thick and 2 microns wide. The second step is a simple vertical deposition of photoresist. The third step models lithography in a very simple manner. An opening with critical dimensions of 0.6 um and a sidewall slope of 87 degree is created with the ETCH statement.

The second part of the input file demonstrates an example of RIE etching simulation using the parameters DIRECTIONAL , ISOTROPICAL , CHEMICAL , and DIVERGENCE . DIVERGENCE determines the standard deviation of the ion's Gaussian angular distribution function for the CHEMICAL component of the RIE etch model. This example shows a number of simulations with a variation of the of the three etching components: DIRECTIONAL , ISOTROPICAL and CHEMICAL etch rates.

The simulation results appear on the joint plot at the very end of the simulation.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.