Effect of Beam Divergence on Etch Rates

anelex07.in : Effect of Beam Divergence on Etch Rates

Requires: Elite
Minimum Versions: Athena 5.21.2.R

This example demonstrates simple trench etching using the RIE etching model. The example illustrates the influence of the DIVERGENCE parameter on the final profile obtained by the CHEMICAL etch mode. The input file consists of four parts. The first part produces the initial multilayered structure using the Athena INITIALIZE, DEPOSIT, and ETCH statements. The INITIALIZE statement defines silicon as a substrate 1.0 micron thick and 2 microns wide. The second step is a simple vertical deposition of photoresist. The third step models lithography in a very simple manner. An opening with critical dimensions of 0.6 um and a sidewall slope of 87 degree is created with the ETCH statement.

The second part demonstrates an example of chemical etching, modeled using the parameter CHEMICAL e.g. rate.etch machine=ad2 silicon a.s rie chemical=50.0 divergence=0.1 The third part shows the same etching mode, except the parameter DIVERGENCE=10 The last part illustrates the same etching mode with DIVERGENCE=45

The simulation results appear on the joint plot at the very end of the simulation.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.