Comparison of RIE Model Components : Comparison of RIE Model Components

Requires: Elite
Minimum Versions: Athena 5.21.2.R

This example demonstrates simple trench etching using the RIE etching model. The input file consists of four parts.

The first part produces the initial multilayered structure using the Athena INITIALIZE, DEPOSIT, and ETCH statements. In the first step, the INITIALIZE statement defines silicon as a substrate 1.0 micron thick and 2 microns wide.

The second step is a simple vertical deposition of photoresist. The third step models lithography in a very simple manner. An opening with critical dimensions of 0.6 um and a sidewall slope of 87 degrees is created with the ETCH statement. The second part demonstrates an example of WET or isotropic etching, which is modeled using the parameter ISOTROPIC e.g. rate.etch machine=ad1 silicon a.s rie isotropic=50.0

The third part shows anisotropic (directional) etching using the parameter DIRECTIONAL e.g. rate.etch machine=ad1 silicon a.s rie directional=50.0 The last part illustrates chemical etching using the parameters CHEMICAL and DIVERGENCE , e.g. rate.etch machine=ad1 silicon a.s rie chemical=50.0 divergence=5 where CHEMICAL is the rate and DIVERGENCE is the standard deviation in degrees of a Gaussian distribution of ions with angle, incident upon the surface. The simulation results appear on the joint plot at the very end of simulation.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.