Trench Etching Using the RIE Model : Trench Etching Using the RIE Model

Requires: Elite
Minimum Versions: Athena 5.21.2.R

This example demonstrates simple trench etching using a combination of isotropic and directional etch components. The initial structure was created in three steps. The INITIALIZE statement defines silicon as the substrate material and specifies the structure dimensions. The second step is a simple vertical deposition. The third step models lithography in a very simple manner. An opening with critical dimensions of 0.8 um and sidewall a slope of 89 degrees is created with the ETCH statement.

The RIE was performed in two steps. The first step has a high isotropic component. This produces a rounded profile with undercutting. The second portion has a high directional component. This produces a quick and dirty simulation of a strawberry shaped profile that is observed experimentally.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.