Analysis of NPN Device with 2 Base Contacts : Analysis of NPN Device with 2 Base Contacts

Requires: SSuprem 4/DevEdit/S-Pisces
Minimum Versions: Athena 5.22.3.R, Atlas 5.28.1.R

This example has been created with two symmetrical extrinsic base contacts in an effort to more clearly demonstrate the use of the contact statement for slaving electrode contacts together. This example is equivalent to the first example in this section in all other respects. It shows:

  • Process simulation of a polysilicon emitter bipolar device
  • Re-meshing of the structure in DevEdit
  • Specification of the linking of two electrode together
  • DC ramp of Vbe with fixed Vce
  • Simultaneous AC simulation during the Vbe ramp
  • Extraction of peak gain and fT

The process simulation, remeshing and basic device simulation syntax used in this example is exactly equivalent to the first example in this section. The difference is in the use to two 'tied' electrodes.

The electrode names base and base1 are defined within Athena and are then held together with the
contact name=base common=base1
statement within Atlas. Thus, the subsequent use of the name v."base" in the solve statements will apply to both the base contact and the base1 contact.

The extract statement at the end of the file makes the addition of the currents from two base contacts for parameter extraction purposes.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.