Zinc Diffusion in N-type Indium Phosphide

ancoex04.in : Zinc Diffusion in N-type Indium Phosphide

Requires: SSuprem 4
Minimum Versions: Athena 5.21.2.R

This example demonstrates the effect of n-type doping on Zinc diffusion in InP.

It has been found that the main diffusion mechanism for Zn in A3B5 compounds is via doubly charged interstitial pairs. This means that Zn diffusivity is proportional to the second power of hole concentrations. Therefore, high background n-type doping concentration results in strong retardation of zinc diffusion. Also, the Zn diffusion profile drops abruptly when n- and p-type concentrations are close to each other near the pn-junction. The diffusivity coefficients DIPP.0 and DIPP.E are selected to approximately match experimental data from G.J. van Gurp et.al. J. Appl. Phys., v.61(5), p.1846 (1987).

The simulation results for high n-type levels are in a reasonable agreement with the experiments from this paper as well. Other effects may influence these simulations. For example, the activation mechanism in this case can be much more complicated than that based on the simple solid solubility level set to 1e19 for all impurities. There is evidence that the solid solubility of Zn may depend on n-type doping level as well. In any case, this example is a good starting point for calibration of impurity diffusion effects in A3B5 compounds.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.