Ion Implant Dose Dependence

ancoex02.in : Ion Implant Dose Dependence

Requires: SSuprem 4, MC Implant
Minimum Versions: Athena 5.21.2.R

This example calculated 10 keV Si implant profiles in GaAs for 3 implant doses: 1e14, 5e14, and 2.5e15 ions/cm**3. The damage accumulation with the implant dose decreases the number of channeling ions which results in relatively smaller channeling tails.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.