Effect of amorphization on dopant channeling

vp2dex10.in : Effect of amorphization on dopant channeling


Requires: Victory Process
Minimum Version: Victory Process 7.22.3.R

The example demonstrates the effect of pre-amorphization of the silicon surface to reduce the channeling tail. It shows the ability of BCA model to predict the amorphization of surface and calculating the reduction in implant tail accordingly. The structure is set up to have a bare silicon surface amorphized to three extents: {number} No pre-amorphization{number} Partial pre-amorphization, i.e. silicon implant of dose 1e14 at 70 keV and tilt of 7 degrees{number} Complete pre-amorphization, i.e. silicon implant of dose 1e15 cm-2 at 70 keV and tilt of 7 degrees. For all the three set ups, the substrate is implanted with arsenic at a dose of 1e13 cm-2 and energy of 100 keV, after the surface amorphization implant step.

The output plots show difference in channeling tails. The obtained plots are analyzed using Tonyplot. Since the implant is not masked, the simulation in Victory Process remains in 1D mode.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.