Channeling in SiC due to change in miscut.theta : Channeling in SiC due to change in miscut.theta

Requires: Victory Process
Minimum Version: Victory Process 7.22.3.R

The example is set up to demonstrate Aluminum channeling in 4H-SiC due to variation is substrate miscut angle, theta.

The simulation varies "sub.miscut.theta" parameter in the "init" statement to initialize a new SiC substrate with varied miscut angle and the substrate is then subjected to Aluminum implant at 65 keV and with a dose of 2.15e13 cm-2. The implant is conducted at 0 degree tilt and 0 degree substrate rotation in order to capture the impact of miscut angle only.

Values used for "sub.miscut.theta" are: 0,1, 2, and 3 degress.

Since the implant is not masked, the simulation in Victory Process remains in 1D mode.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.