Trench Implant at angle showing shadow effect

vp2dex07.in : Trench Implant at angle showing shadow effect


Requires: Victory Process
Minimum Version: Victory Process 7.22.3.R

The example is set up to demonstrate the shadow effect using Monte Carlo implant in Victory Process run in process mode.

The structure consists of a 2 um deep and 0.5 um wide trench in silicon substrate. The trench is etched using a mask. The structure is then subjected to boron implant, without masking the surface, at a tilt of 12 degrees. Monte carlo implant model is used so that ion trajectories can be mapped.

The output structure shows a high concentration region on the right wall of the trench, which is due to the direct implant, and a low concentration scatter region on the left wall of the trench, which is formed by the ions reflected off the right wall during angled implant.

The example is set up to have trench depth and tilt angle variablized using "set" command so that you can experiment with these values to decrease or increase the shadow effect on the left wall.

The output should be viewed in Tonyplot window set to plot by data. This can be achieved by going to Tonyplot > Edit > Preferences > plot options > x/y plot ratio > To data.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.