Effect of Tilt, Energy & Dose on Implant Profile in Silicon

vp2dex06.in : Effect of Tilt, Energy & Dose on Implant Profile in Silicon


Requires: Victory Process
Minimum Version: Victory Process 7.22.3.R

The example demonstrates the effect of implant angle (tilt), implant energy and dose on the implant profile. The example is set up to contain 3 experiments:

{number} Implants boron at 10 keV and with a dose of 1e14 using bca implant model, with 0, 1, 3, 5 and 7 degree tilts. The output plot compares the profiles of the implanted boron. Each implant is performed independently over a bare silicon surface to obtain comparative results. {number} Implants boron using bca implant model. The implant is performed at 7 degree tilt and 1e14 cm-3 dose and energy is varied to include 20 keV, 40 keV, 60 keV and 100 keV implants. Each implant is performed independently over a bare silicon surface to obtain comparative results. {number} Implants boron using bca implant model. The implant is performed at 7 degree tilt at a constant energy of 10 keV. The dose is varied to include 2e11 cm-2, 2e13 cm-2, 2e14 cm-2, and 2e15 cm-2. Each implant is performed independently over a bare silicon surface to obtain comparative results.

The output profiles are plotted and compared using Tonyplot. Since the implant is not masked, the simulation in Victory Process remains in 1D mode.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.