Dopant dependent oxidation in Silicon : Dopant dependent oxidation in Silicon

Requires: Victory Process
Minimum Version: Victory Process 7.22.3.R

The example demonstrates the variation of rate of oxide growth due to dopant concentration in the substrate. Here, the substrate (n-type silicon) contains a n+-type well doped on one side and the entire surface is then subjected to thermal oxidation using "fermi" diffusion model. The example shows thicker oxide over the region with higher phosphorus concentration than the over the region with low phosphorus concentration.

After the thickness extractions, the output plots are visualized and analyzed using Tonyplot.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.