Substrate rotation effect on oxide growth in silicon

vp2dex04.in : Substrate rotation effect on oxide growth in silicon


Requires: Victory Process
Minimum Version: Victory Process 7.22.3.R

The example demonstrates the effect of crystal orientation on growth rate of oxide on trench sidewalls. The orientation of the substrate (silicon) is set by "orientation" parameter in the init statement. This example uses <100> substrate. Substrate rotation of 0 deg and 45 deg are tested. These values are set using the "sub.rot" parameter in the init statements.

The substrate initialized for each rotation is etched on right side to create a trench which is 2 um deep. It is then subjected to a diffusion in wet oxide ambiance at 1000 deg C for 20 min to enable oxide growth over the exposed surface. The oxide thickness along the trench side wall and trench base is extracted using deckbuild "extract" functionality.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.