Enhancement effect of oxidation when using various diffusion models

vp2dex03.in : Enhancement effect of oxidation when using various diffusion models


Requires: Victory Process
Minimum Version: Victory Process 7.22.3.R

The example demonstrates enhancement effect of oxidation using different diffusion models. The example shows how simple diffusion models like fermi and direct do not show any effect of oxidation in the dopant profile but advance diffusion models like twodim shows significant change in the dopant profile when the substrate is annealed in an oxidizing environment.

The example is set up to have a silicon surface implanted with boron (without any other processing steps) with a dose of 1e13 cm-3 smd 70 keV energy using monte carlo implant model.

This structure is then annealed for 30 minutes at 1000 deg C temperature in dry O2 ambience using different diffusion models. Since the implant is not masked, the simulation in Victory Process remains in 1D mode.

After the annealing, the output structures/profiles are plotted in Tonyplot.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.