Effect of Dopant size in implant profile

vp2dex11.in : Effect of Dopant size in implant profile


Requires: Victory Process
Minimum Version: Victory Process 7.22.3.R

The example demonstrates the effect of dopant size during ion implantation in silicon substrate.

It is known that the lighter the dopant ion is, the less damage it will do to the substrate when bombarded onto the surface at high energy. If the dopant ion is heavy and large in size, it will cause structural damage to the surface of the substrate to some extent leading to some amorphization of the surface, i.e. less ordered crystal lattice. Such an event prevents heavier ions to channel deep into the substrate thereby allowing the formation of shallow junctions with less channeling.

This example shows a bare silicon substrate implanted with boron, phosphorus and arsenic independently , with a dose of 1e14 cm-2 and at an energy of 70 keV. The ion implantation is performed using monte carlo implant model. The output implant profiles are overlapped and compared against each other using Tonyplot.

Since the implant is not masked, the simulation in Victory Process remains in 1D mode.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.