Ion Enhanced Chemical Etching Example

vpex07.in : Ion Enhanced Chemical Etching Example

Requires: Victory Process : Core Simulator, 3D Physical Etch & Deposit
Minimum Versions: Victory Process 7.22.0.R

This example demonstrates the ion enhanced chemical etching model. The enhancement effect is demonstrated by performing two simulations with different ion acceleration. Moreover this example illustrates the generation of round mask features.

List of key syntax:

Init: Defines simulation volume and meshing resolution

SpecifyMaskPoly: Defines mask layer polygon

Save: Saves simulation status

Export: Exports simulation status in Tonyplot 3D format

Deposit: Deposition with geometrical mode

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.