Deep Reactive Ion Etch example

vpex06.in : Deep Reactive Ion Etch example

Requires: Victory Process : Core Simulator, 3D Physical Etch & Deposit
Minimum Versions: Victory Process 7.22.0.R

This example demonstrates the syntax needed for the simulation of a reactive ion etch and passivation process. This example also illustrates the definition of mask polygons in Victory Process

After preparing the initial structure using a polygon mask and a geometrical deposition step, the reactive ion etch (RIE) model is activated. Finally the reactive ion etch model is called in a sequence with a conformal passivation step.

List of key syntax:

Init: Defines simulation domain and geometrical mesh resolution and number of Adaptive Mesh Refinement (AMR) levels

SpecifyMaskPoly: Defines mask layer polygon

Deposit: Deposition with geometrical mode

Etchdepoproperties: Defines material properties relevant to etch and depo steps. Parameters include: name, to assign a deck name to the material properties for later reference, material, to define the material for which the following parameters are valid, rate, to define the etch rate in um/sec, um/min or um/hour with um/min being the default.

Flux: Defines a c-function based flux model. In this case the rieetcherflux model which has two parameters and two dependencies.

TopographyModel: Once given a name, defines a deposition or etching model by combining a surface reaction model and a flux model.

Deposit: Performs a physical deposition process. Parameters include: model, to select the depo model, material, to define the deposited material, depositionrate, to define the deposition rate in um/sec, um/min or um/hour with um/min being the default and time to define the deposition time in sec, min or hour with min being the default.

Etch: Performs a physical etching step. Parameters include: model to select the etch model, materialproperties to select the material properties (see Etchdepoproperties statement), time to define the etching time in sec, min or hour with min being the default and maxCFL to control the maximal time step for the simulation of this process step.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.