Grain Boundary CIGS Solar cell simulation : Grain Boundary CIGS Solar cell simulation

Requires: S-Pisces/Luminous/tft
Minimum Versions: Athena 5.22.1.R, Atlas 5.24.1.R

This example shows the modelization of Grain Boundary in a CIGS solar cell. The solar cell consists of window, buffer and absopber layers and is implemented as 200nm ZnO, 50nm Cds and 3um CIGS layer respectively, which is typical of CIGS solar cell. Interface recombination at the Cds/CIGS interface is included. All layers have uniform band-gap energy versus depth. Gaussian-distributed defect states are also considered.

Parameterized Grain Boundaries are introduced horizontally and vertically. Meshing and regions are created automatically. Grain Boundary are modeled by a thin layer located between two uniform regions of CIGS material and the Grain Boundary layer differs from the surrounding bulk material only by presence of additional defects.

You can define the x direction grain spacing as well as the y direction grain spacing and the grain boundary thickness at the beginning of the input deck. This example allows the investigation of Grain Boundaries architecture on the performance of the solar cell.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.