Quantum Tunnelling in a Silicon Diode

quantumex10.in : Quantum Tunnelling in a Silicon Diode

Requires: S-Pisces
Minimum Versions: Atlas 5.24.1.R

This examples demonstrates:

  • Example of a QTREGION statement.
  • Example of BBT.NONLOCAL and BBT.NLDERIVS commands.

In this example, the QTREGION statement is used to set up a mesh suitable for tunneling calculations. The device is a degenerately doped silicon p-n diode. Non-local Band-To-Band tunneling is selected on the MODELS statement by using the BBT.NONLOCAL keyword. Because the solution will go to relatively high levels of tunneling current, convergence may become difficult. The optional parameter BBT.NLDERIVS is used to improve this. The diode is biased into both forward and reverse biases. In forward bias a tunneling current occurs up to about 0.3 V, and at higher bias the usual forward bias diffusion current occurs as can be seen in the LOG file. The STRUCTURE files, with the BBT tunneling current displayed, show the actual tunneling current being injected into the device. Under reverse bias it acts like generation, under forward bias like recombination.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.