RIE Trench

solidex08.in : RIE Trench

Requires: Victory Mesh
Minimum Versions: Victory Mesh 1.4.7.R
The Reactive-Ion Etching process is commonly used to etch deep, nearly vertical, pillars. Silvaco's process simulator (Victory Process) can simulate the RIE process, however it can be costly for very deep trenches. If a user is interested in the device simulation instead, Victory Mesh can be used to generate the geometrical shape directly. In this example we will show how a deep 3D RIE trench can be cut directly using solid modeling commands.
The example consists of two stages. The example begins by forming a small section at the base of the trench, followed by an offset mirror to duplicate the repetitive trench side walls.
The first stage is to create a small cuboid of silicon. This will become the substrate. The combine and splice commands are used to insert two ellipsoids inside each other and the cuboid respectively. Finally, the top is removed via the crop command to expose the buried nested ellipsoids. This gives the bottom shape of a RIE trench.
At this point in the deck there is a mini RIE trench. The top piece of this trench can be mirrored as many times as desired using the offset mirror command. This is similar to a normal mirror, but with an optional offset. In this case the sub-section above -0.45 in the vertical z-axis (-z) is mirrored.
At this stage a valid process mesh has been produced. It is suitable for any remesh scheme. In this example the Delaunay remesh and interface refinement along the trench are demonstrated. The final device can then be loaded into Victory Device.