Impact of bending on a TFT device : Impact of bending on a TFT device

Requires: Victory Mesh/Victory Device
Minimum Versions: Victory Mesh 1.4.7.R / Victory Device 1.14.1.R
Thin Film Transistors (TFTs) are used in a wide range of flexible/printed applications. The impact of bending (mechanical deformation) is of recent interest due to the use of flexible/wearable electronic devices. In this example, the TFT device is created directly using Victory Mesh. The bend command is used to apply tensile and compressive bending to a device.
The Y layers command is used to create a device with variable layer material and thickness. These layers can also be varied in the vertical axis. In this example three layers are specified in the x-axis, and five layers within those (in the z-axis). Note that the materials contain three outer levels, and five nested levels within those. The parentheses are used to nest the matrix of materials .
This creates a planar device on which the electrodes can be attached using the tag and electrode commands.
This same device will be used as the basis for the proceeding bend transform. Initially a simple polar bend is generated in a single axis forming a geometric tensile bend in the channel. The device can also be bent in the y-axis.
The origin of the bend can also be set, such that the bend is compressive with the channel. The third bend shows this. In a typical application there are multiple forms of bending impacting the device at the same time. The final example shows the sinusoid transform mode of the bend applied in both horizontal axis.
In this example, two of the polar meshes are compared against a simple planar device in Victory Device. Following the deformation the channel length is modified which impacts the drain current in both cases.