MIS Solar cell

solarex15.in : MIS Solar cell

Requires: S-Pisces/Luminous
Minimum Versions: Atlas 5.28.1.R

For a Metal Insulator Semiconductor (MIS) diode, the IV characteristic critically depends on the insulator thickness. If the insulator thickness is thick enough (> 50A) carrier transport through the insulator is negligible and the MIS diode represents a conventional MIS capacitor. In this example a diode with an insulator thickness of 23.5A and a metal to insulator barrier height of 3.2ev is simulated. To obtain current through the insulating oxide, we used the self-consistent direct quantum tunneling models for electrons and holes. To activate this model in Atlas, qtnlsc.ho qtnlsc.el are set in the model statement

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.