Reverse I-V of SiC Schottky and Junction Barrier Schottky (JBS) Diodes : Reverse I-V of SiC Schottky and Junction Barrier Schottky (JBS) Diodes

Requires: Victory Device or Atlas
Minimum Versions: Victory Device 1.14.1.R or Atlas 5.28.1.R

This example demonstrates simulation of Reverse I-V and Breakdown curves of two types of SiC devices: - 4H-SiC Schottky Barrier Diode (SBD), and - 4H-SiC Junction Barrier Schottky (JBS) diode, using an anisotropic impact ionization model specific for SiC.

The input deck provided with this example can be run by either Victory Device or Atlas simulator, by changing the solver name in the command go victorydevice into go atlas . It shows that both device simulator frameworks can be fully compatible in terms of input commands, producing same results, and allowing easy transition between Atlas and Victory Device.

Reference (with Experimental Data):

[1] L. Di Benedetto, G.D. Licciardo, T. Erlbacher, A. Bauer, and S. Bellone, "Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes", IEEE Transactions on Electron Devices, Vol. 63, No. 6, pp. 2474-2481, June 2016.

Experimental data from [1] (Fig. 9) are provided with the example and plotted along with the TCAD simulation results, demonstrating a very good match with the measured reverse I-V and breakdown curves.

The simulation is run using 80-bit precision, by setting the option:


The structure files of each device, SBD and JBS, in equilibrium and in breakdown, are saved and can be viewed in Tonyplot . You can view internal physical variables inside the devices, such as electric field, impact generation rates, current density distribution, etc. Overlaid I-V plots can be plotted by using Overlay feature in TonyPlot .

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.