Multiple SEU Strikes in a 6 Transistor 22nm SRAM : Multiple SEU Strikes in a 6 Transistor 22nm SRAM

Requires: Victory Process/Victory Mesh/Victory Device/SEE
Minimum Versions: Victory Process 7.30.4.R, Victory Mesh 1.4.6.R, Victory Device 1.14.1.R

This examples demonstrates Multiple Strike SEU Simulation in a 6 Transistor 22nm SRAM Cell.

Victory Process in Cell Mode is used to create the 6 transistor SRAM cell structure. The 4 layers of metal interconnect are left off in this example in an effort to speed up the device simulation. A mixture of mask features and traditional "line" statements are used to create the structure mesh. Monte- Carlo implant is used extensively in the process flow, so the process simulation run time can be greatly reduced by taking advantage of the mult- threaded option on the "go victoryprocess" line.

In the device simulation, a large number of "contact" statements are required to connect the various parts of the circuit, that would have been connected by the 4 layers of interconnect, that were omitted from the original design, in the interests of device simulation speed. Also of note is the "seu.integrate" parameter in the method statement that ensures correct total charge integration in the SEU charge track, reducing still further the required mesh count in the vicinity of the strike locations.

The device simulation hits the nMOS devices in the main Flip-Flop of the SRAM with SEU strikes, staggered in time to allow for circuit recovery before the next strike. Striking each nMOS device in turn ensures that at least one of the strikes will occur to an nMOS device in an "off state" ensuring that the SRAM will change state at least once as a result of the strikes.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.