Single Event gate Rupture (SEGR) in a Power MOSFET : Single Event gate Rupture (SEGR) in a Power MOSFET

Requires: Victory Process/Devedit/Victory Mesh/Victory Device/SEE
Minimum Versions: Victory Process 7.30.4.R, Devedit 2.8.26.R, Victory Mesh 1.4.6.R, Victory Device 1.14.1.R

This examples demonstrates Single Event gate Rupture (SEGR) in a Power MOSFET

The structure of the 3D Power MOSFET in this example is conveniently cylindrically symmetric allowing the 3D structure to be simulated accurately using only two dimensions with cylindrical co-ordinates. For the simulation of single events, only a central and vertical strike is a valid candidate for correctly simulating 3D effects using this 2 dimensional circular symetry method. This method is invoked using the cylindrical parameter, on the mesh statement.

After the 2 dimensional Victory Process simulation of the power MOSFET, the structure was exported to Devedit to create a mesh suitable for device simulation.

In the device simulator, the power MOSFET is biased to a condition where the drain voltage is approximately twice the gate voltage, which is known to make such a device more susceptible to gate rupture after a single event.

A single event, with an LET value of 37.2 MeV-cm2/mg corresponding to a bromine ion, was allowed to strike the power MOSFET and the evolution of the gate oxide electric field was monitored using the probe statement. It is observed that the gate oxide electric field suffered a 3 fold increase, just after the strike, taking it close to the bulk dielectric breakdown field strength and therefore vulnerable to an irreversible di- electric breakdown event. The gate oxide Fowler Nordheim current was also monitored and exceeded one tenth of a nano Amp.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.