SEU in a Reverse-Biased Diode : SEU in a Reverse-Biased Diode

Requires: DevEdit 3D/Device 3D
Minimum Versions: Atlas 5.28.1.R

This examples demonstrates SEU simulation in a reversed biased three dimensional diode.

In this example, a diode structure is constructed using DevEdit 3D. The structure is then passed to Atlas. The input file consists of the following parts:

  • Construction of the 3D device in DevEdit 3D
  • Transfer of the structure to Atlas by the DeckBuild autointerface feature
  • Setting of the physical models
  • Perform DC bias solution
  • Specification of parameters for the charge track
  • Simulation of the effects of SEU

The first stage of the input constructs the diode geometry, material regions, doping profiles, and electrodes in DevEdit 3D. The structure was created in DevEdit 3D by drawing the device regions in interactive mode and specifying 3D doping distribution. Finally, the mesh was generated automatically by specifying basic mesh constraints and refining in the important areas of the device.

The Atlas simulation begins by reading the structure from DevEdit 3D. DeckBuild provides autointerface between DevEdit 3D and Atlas so that the structure produced by DevEdit 3D is transferred to Atlas without having to indicate the mesh statement.

The models statement is used to select a set of physical models for this simulation. In this case, these models are SRH recombination, bandgap narrowing, concentration and field dependent mobility model.

After the initial solution, the emitter voltage is ramped up to 3V in DC mode, thereby giving the initial condition of the structure for transient analysis. The Newton algorithm is used for these calculations.

The key syntax in any SEU simulation is the singleeventupset statement, which is used to specify entry and exit points, radius and density of the electron-hole pair distribution generated by the particle track.

Transient analysis is then performed to simulate charge collection in the device due to the SEU. The method halfimpl statement indicates that the half implicit scheme is to be used in the transient simulation. In this scheme the Poisson's, two continuity, and the total current equations are solved in sequence. This method ensures efficient and fast convergence in transient mode.

The results of the simulation are saved in the log file and then displayed using TonyPlot.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.