Silicon FINFET device in 3D with BQP : Silicon FINFET device in 3D with BQP

Requires: DevEdit 3D/Device 3D/Quantum 3D
Minimum Versions: Atlas 5.28.1.R

This example demonstrates:

  • Application of the BQP model coupled with energy balance to a complex 3D device.
  • Application of BQP in case of 2D quantisation.
  • Effect of quantum confinement on carrier density in FINFET.

The example illustrates the modelling of a FINFET device using BQP and Energy balance in 3D. The quantisation inside the channel is almost 2-dimensional and since we do not have a principal direction of quantisation we cannot be sure that the model is calibrated until we do a calibration against a 2D Schrodinger-Poisson model. This is not currently available in Atlas but a calibration performed for SILVACO by the authors of the BQP model suggests using isotropic effective masses in Silicon of 0.7 m0 with BQP.NALPHA = 0.3 and BQP.NGAMMA = 1.4.

The 3D device structure is created in DevEdit 3D and the required models are set. After the SOLVE.INIT statement, the solution for a gate voltage of 0.2 Volts is obtained using the NOCURRENT initial guess parameter. A drain bias is applied and then the gate voltage is ramped to turn the device on. The drain current is plotted in TonyPlot and the device structure in TonyPlot3D. The cutplane facility of TonyPlot3D can be used to look at the electron density and quantum potential in the channel, which illustrate the reduced electron density at the Si/Oxide interface.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.