Super-Junction "RESURF" LDMOS

powerex19.in : Super-Junction "RESURF" LDMOS

Requires Victory Process - Victory Device
Minimum Versions: Victory Process 7.30.4.R, Victory Mesh 1.4.6.R, Victory Device 1.14.1.R

By default Victory Process and Device run on just one processor. To ensure better perfomance on your computer the following simulation condition simflags="-P all" could be specified in the go statement starting Victory Process or Device. This means that all processors available will be used. If you want to use a smaller number of processors you can substitute "all" with a desired number, e.g. simflags="-P 4".

This simulation is similar to the previous Buffered Superjunction LDMOS but uses a low doped substrate and longer superjunctions to increase the off state breakdown voltage to approximately 500 volts.

The structure is modelled after the one proposed by Ming Qiao et al. in the "Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's", May 23-26, 2011 SanDiego, CA, entitled: "A Noval Substrate- Assisted RESURF Technology for Small Curvature Radius Junction".

This simulation models the active region unit cell of the above device. By careful optimization of the superjunction widths and lengths together with the doping concentrations of these super-junctions and the related N-Well, a 500 volt breakdown device is realized when coupled with a high resistivity substrate.

The 3D device is then passed to Victory Device to simulate the breakdown voltage and threshold voltage curves (IdVg)

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.