Wide Bandgap Ga2O3 MOSFET

powerex17.in : Wide Bandgap Ga2O3 MOSFET

Requires: ATLAS
Minimum Versions: ATLAS 5.26.1.R

Single-crystal gallium oxide (Ga2O3) has attracted increasing attention as a promising material for power device applications. It possesses excellent material properties and has the potential for mass productivity of low-cost and high-quality bulk crystals by using methods such as the edge-defined film-fed growth (EFG) method [1].

The objective of this example is to demonstrate how to simulate this new wide bandgap oxide semiconductor material Ga2O3 and to reveal what kinds of physical models and settings are needed in order to reproduce experimental I-V data. The experimental data used in this benchmark were selected from a recently reported paper on the first demonstration of Ga2O3 MOSFET [2].

The substrate is a semi-insulating single-crystal β-Ga2O3 and a 300 [nm] thick n-type Ga2O3 channel layer was grown on it. The dopant concentration of the layer is 7e17 [1/cm3] and about half of this is considered to be activated. The source and drain contact regions were formed by multiple Si implantations with 150 [nm] deep box profile whose concentration is 5e19 [1/cm3]. We assumed that 3e19 [1/cm3] were activated. The distance between the source and the drain box regions is 20 [um] and a 20 [nm] thick Al2O3 gate dielectric film was formed with a 2 [um] long Ti/Pt/Au metal gate on top.

We selected simple device models as much as possible. Only the LAT.TEMP parameter was set on the MODEL statement to solve the heat flow in the device and a constant thermal conductivity model was used.

Simulated ID-VD curves and a ID-VG curve are shown in Fig.2 and Fig.3 with corresponding experimental data. Fairly good agreements with experimental data were obtained using constant mobility model even without any defect trap and interface charge

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References:

1]. H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa and Y. Yaguchi, "Growth of B-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method " Jpn. J. Appl. Phys. 47, 8506(2008).

[2]. M.Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui and S. Yamakoshi, "Depletion-mode Ga2O3 MOSFETs " 71st Annual Device Research Conference (DRC), 10.1109/DRC.2013.6633890.