CoolMOS : CoolMOS

Requires: SSuprem 4/S-Pisces
Minimum Versions: Athena 5.22.3.R, Atlas 5.28.1.R

This example demonstrates modeling of a CoolMOS power device based on the paper:

P. N. Kondekar et al. "Study of the Degradation of the Breakdown Voltage of a Super-Junction Power MOSFET due to Charge Imbalance", J. Korean Phys. Soc., Vol.48, (2006) pp.624.

It shows:

  • Structure definition using Athena
  • Reverse Voltage Characteristics using Atlas

The CoolMOS is a novel power Device. In the CoolMOS device, the drift region of a conventional power MOSFET is replaced by a superjunction (i.e. a combination on N- and P- strips in parallel). When the device is on, the N- strip conducts the drain current. When the device is off and a drain voltage is applied, it appears as a reverse bias between the N- and P- strips. A depletion region forms and a relatively small value of Vd fully depletes the drift region. Subsequently the drift region behavior is similar to that of an intrinsic region allowing higher breakdown voltage.

Once constructed, the device reverse characteristics are then simulated in Atlas (SPISCES), and the final results are plotted showing a breakdown voltage higher than 600V.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.