Merged PiN Schottky Power Diode : Merged PiN Schottky Power Diode

Requires: SSuprem 4/S-Pisces
Minimum Versions: Athena 5.22.3.R, Atlas 5.28.1.R

This example demonstrates modeling of a combination PiN and Schottky Power Diode device based on the paper:

S.Musumeci et. al. "Modeling and Characterization of a Merged PiN Schottky Diode with Doping Compensation of the Drift Region", Industry Application Conference, 2004. 39th IAS Annual Meeting. Publication date: 3-7 Oct.2004 Volume 2, pp. 1244-1251

It shows:

  • Structure definition using Athena
  • Forward and Reverse Voltage Characteristics using Atlas

The device is first constructed in the process simulator, Athena (SSuprem 4), using three stages of epitaxial growth with masked boron implants prior to each stage. A long, high temperature anneal then diffuses these implanted regions together to create a deep p-doped region to help spread the electric field at high reverse bias.

Once constructed, the device forward and reverse characteristics are then simulated in Atlas (SPISCES), using the " Universal Schottky Tunneling " model (UST) and the final results are plotted using the same X and Y axes as in the paper for a direct comparison with measured results.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.