Simulation of 3 Layer(HTL/EML/ETL) OLED J-V : Simulation of 3 Layer(HTL/EML/ETL) OLED J-V

Requires: Blaze/Organic Display
Minimum Versions: Atlas 5.24.1.R

In this example we simulate a 3-layer device with HTL/EML:doped/ETL in described in [1]

We performed numerical simulation using paramters listed in published data [1] to get J-V curve in conventional 3 layer OLED structure and simulation result is quite close to experimental data. The classical drift-diffusion model with band thoery is used here for organic carrier transport. Each layer's thickness, mobility paramters, and band gap paremters are introduced based on fitting results with analytical injection model. They extracted HTL and ETL layer simulation paramter except EML layer with dopant. We used the same energy band value for HTL and ETL which is shown in Figure 4. [1], but we tried to calibrate EML's HOMO level assuming that dopant insertion is p-type. In this example, we performed quasi-static bias sweeping for better simulation curve at low and intermediate bias range instead of using constant DC bias sweep. The Poole-Frenkel factor in EML layer is also adjusted from ETL layer paramter value. In our test, HTL and ETL parameters in [1] also reproduce well the simulation curve in both single layer(Hole only device) and two layer oled structure. We put some slight doping in HTL layer to reproduce the HTL thickness dependence on J-V curve. The interface trap effect at organic interface

[1] Sang-Gun Lee et al., Numerical Modeling; Thickness Dependence of J-V Characteristic for Multi-Layered OLED Device, IEICE Trans. Electron., Vol. E95-C, No. 11 November 2012, p 1756.

To load and run this example, select the Load example button in DeckBuild. This will copy the input file and any support files to your current working directory. Select the run button to execute the example.