Recessed N-Type MESFET : Recessed N-Type MESFET

Requires: Mercury
Minimum Versions: Atlas 5.24.1.R

The Mercury module is optimized for simulating epitaxial FETs. That is FETs where the material and doping are constant along the x-dimension of the device (from the source to the drain). The only variation allowed in the x-direction is the position of the gate and the position/depth of a recess on the surface.

This example defines a simple, recessed n-type MESFET and simulates the DC-IV curves and the small-signal AC characteristics.

This example introduces the surface command that is used to define the recess.

To load and run this example, select the Load example button in DeckBuild. This will copy the input file and any support files to your current working directory. Select the run button to execute the example.