Tuning Directional and Isotropic Etch for Spacer Formation

ancaex06.in : Tuning Directional and Isotropic Etch for Spacer Formation

Requires: ELITE
Minimum Versions: Athena 5.21.2.R

This example demonstrates how to use etch rate parameters to tune a MOS spacer width and shape. In the first simulation the etch rate is completely directional. This corresponds to simple dry (anisotropic) etching of SSuprem 4. The dry etch model usually overestimates spacer width. In the second simulation, an isotropic component is included which results in a narrower spacer.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.