7nm pFinFET With SiGe Source-Drain Stressors

mos2ex26.in : 7nm pFinFET With SiGe Source-Drain Stressors

Requires: Victory Process 3D Structure Editor, 3D Diffusion and Implantation Victory Device 3D
Minimum Versions: Victory Process 7.30.4.R, Victory Mesh 1.4.6.R, Victory Device 1.14.1.R

For devices with a gate length of 28nm and below, it is possible to obtain significant mobile carrier mobility enhancement for most of the channel length, using remotely located epitaxial stressor material in the source drain regions. Using mobility enhancement techniques like this for p-channel devices can reduce the need for wider gate widths to match complimentary n-channel current drives, allowing the possibility of truely symmetrical layouts for complimentary MOS designs.

In this example, we show the effects of mobility enhancement using epitaxially grown SiGe source-drain regions in a 7nm p-channel FinFET. The stress calculation is invoked during the process simulation with the Stress exposed statement line. This calculates the stress induced by the SiGe epitaxial source-drain regions. At the end of the process simulation, any additional stress induced by subsequent processing steps is adjusted for by the Stress exposed rebalance line. The stress calculations are saved into the final structure file, which is then exported to Victory Device. The strain induced mobility enhancement is calculated in the mobility material=silicon model.iso=1 nhance phance line. These enhanced mobility values are then included into any subsequent mobility model.

The first device simulation calculates the un-saturate IdVg curve without invoking the strain enhancement calculations, whilst the second device simulation takes strain into account. The difference due to the strain enhanced mpobility is shown in the final plot.


To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.