20nm n-MOSFET created using 60nm lthography

mos2ex17.in : 20nm n-MOSFET created using 60nm lthography

Requires: SSuprem 4/MC Implant/Elite/S-Pisces
Minimum Versions: Athena 5.22.3.R, Atlas 5.27.1.C

This examples demonstrates the creation of a self-aligned 20nm n-MOSFET using a 60nm lithography node. This Silvaco designed process has several advantages:

  • The channel implant does not penetrate the gate insulator
  • Transient enhanced diffusion effects in the silicon are avoided
  • Very low energy implants are avoided
  • 20nm gate length devices can be fabricated using 60nm litography

Non penetration of the gate stack by the channel implants removes the damage that this implant usually causes. The source/drain implants are also arranged in such a way that damage to the silicon is avoided. Transient enhanced diffusion in the silicon and other damage effects therefore do not occur. Implant energies of 10keV are used, allowing the use of standard implanters, and finally the 20nm device can be created with 60nm lithography technology, thus reducing the cost.

The stress induced by the nitride spacers is calculated in Athena which is passed to the Atlas device simulator and converted into strain. This strain is used to calculate the strain modified bandgaps and mobilities in the device.

In Atlas, the strain dependent bandgap model is invoked by the STRESS parameter in the models statement and the strain dependent mobility models are invoked by the EGLEY.N and EGLEY.P parameters in the mobility statement.

The output statement adds electron mobility and velocity to the saved structure files, from which it can be seen that most of the channel is velocity saturated, or close to it, as a result of the extreme dimensions of this device. As a result of these dimensions, the device yields an output current density exceeding 2000uA/um for Vg=Vd=1.2V

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and any support files to your current working directory. Select the Run button in DeckBuild to execute the example.